Double Sided Integrated GaN Power Module with Double Pulse Test (DPT) Verification

Wide Bandgap devices (WBG) have led to an era of high speed and voltage operations that were not previously achievable with silicon devices. However, packaging these in the power module has been a challenge due higher switching rates which can cause several amperes displacement current flow through parasitic capacitance package thus impacting gate driver operation ability device. The severity this increases thin substrates unlike traditional inorganic e.g. DBC thorough investigation is needed before it be used WBG semiconductors. objective paper discuss ways reduce as well manipulate at different locations modules magnitude peak RMS value better drive signal waveform. To study this, Double Pulse Test (DPT) simulation conducted show how intelligent distribution benefits device functioning. This validated experimental fabrication DPT dense following proposed guidelines. A detailed description design high-speed capable circuit measurement setup specified steps for reliable testing measurement.